Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
نویسندگان
چکیده
منابع مشابه
A combined method for synthesis of superconducting Cu doped Bi2Se3
We present a two-step technique for the synthesis of superconducting CuxBi2Se3. Cu0.15Bi2Se3 single crystals were synthesized using the melt-growth method. Although these samples are non-superconducting, they can be employed to generate high quality superconducting samples if used as precursors in the following electrochemical synthesis step. Samples made from Cu0.15Bi2Se3 reliably exhibit zero...
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Electron spin resonance and ab initio electronic structure calculations show an intricate relation between molecular rotation and chemical bonding in the dilute solid solution. The unpaired electron of C59N is delocalized over several C60 molecules above 700 K, while at lower temperatures it remains localized within short range. The data suggest that below 350 K rigid C59N-C60 heterodimers are ...
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Yi-Lin Wang,1 Yong Xu,2 Ye-Ping Jiang,1,2 Jun-Wei Liu,2 Cui-Zu Chang,1,2 Mu Chen,1,2 Zhi Li,2 Can-Li Song,1,2 Li-Li Wang,1 Ke He,1 Xi Chen,2 Wen-Hui Duan,2 Qi-Kun Xue,1,2,* and Xu-Cun Ma1,* 1State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua U...
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In Part I we reported experimental results obtained from isothermal stress relaxation tests of electroplated Cu thin films with and without a passivation layer and deduced grain-boundary and interface diffusivities based on a kinetic model. Here in Part II we describe the detail of the model, which is based on coupling of grain-boundary diffusion with surface diffusion for unpassivated films an...
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Photodarkening relaxation under light exposure of a-As2Se3 amorphous films doped with 0.5-5.0 at.% Sn was studied for its dependence on the concentration of impurities and thermal treatment. Both factors reduce photodarkening with the degree of reduction dependent on the concentration of impurity. The relaxation process may be described by a stretched exponential with the dispersion parameter 0...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2017
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.96.075152